| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3347
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32577
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3299
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32935
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32642 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 |
| filingDate |
2016-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7c443af14c898c0203ce64b784dc184 |
| publicationDate |
2017-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2017212051-A |
| titleOfInvention |
Plasma processing method |
| abstract |
An object of the present invention is to reduce the amount of change in tilting angle within an allowable range. A processing container capable of being evacuated; a focus ring disposed around a lower electrode on which a substrate to be treated is placed; an inner upper electrode disposed opposite to the lower electrode; A processing gas is supplied to the processing space P and the quartz member 22 disposed between the outer upper electrode 21o disposed on the outer side, the inner upper electrode 21i, and the outer upper electrode 21o, and disposed above the focus ring 15. A gas supply unit 39; a first high-frequency power source 32 for applying a first high frequency for generating plasma of the processing gas to the lower electrode 11 or the inner upper electrode 21i and the outer upper electrode 21o; and a first direct current to the outer upper electrode 21o. A plasma processing apparatus comprising: a variable DC power supply 40 that applies a voltage; and a control unit 100 that controls the first DC voltage so as to reduce the amount of change in tilting angle. And a plasma processing method. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7055054-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019186400-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020091942-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11488807-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7142551-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210029100-A |
| priorityDate |
2016-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |