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filingDate 2017-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2017-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2017152713-A
titleOfInvention Method and apparatus for plasma dicing semiconductor wafer
abstract PROBLEM TO BE SOLVED: To realize the benefits that plasma etching techniques should have in terms of die separation, as current automated plasma etching equipment is not suitable for processing a fixed substrate for dicing. Have difficulty. The present invention provides a method of plasma dicing a substrate. The method includes providing a processing chamber having walls, supplying a plasma source adjacent to the walls of the processing chamber, supplying a workpiece support in the processing chamber, and placing a substrate on the frame. Placing the workpiece on a support film to form a workpiece; loading the workpiece onto a workpiece support; providing a cover ring disposed above the workpiece; and Generating and etching the workpiece with the generated plasma. [Selection] Figure 6
priorityDate 2011-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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