http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017152437-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
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filingDate 2016-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8794948301385da0a32beb28bced1072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff256f506205afd6c49b3b7d17f1b8f0
publicationDate 2017-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2017152437-A
titleOfInvention Plasma processing apparatus and semiconductor device manufacturing method
abstract Provided are a plasma processing apparatus and a semiconductor device manufacturing method capable of protecting a second surface of a substrate from plasma when the first surface of the substrate is processed by plasma. According to one embodiment, a plasma processing apparatus includes an electrostatic chuck that holds a substrate. The apparatus includes an enclosing member holding unit that holds an enclosing member that surrounds an end of the substrate. The apparatus includes a plasma supply unit that supplies plasma for processing the substrate to the first surface side of the substrate. The apparatus further discharges gas to the second surface side of the substrate from a gas hole provided in a side surface of the electrostatic chuck or a gas hole provided in the surrounding member, so that the end portion of the substrate and the enclosure The gas supply part which supplies the said gas to the space between members is provided. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11664253-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190139061-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102223759-B1
priorityDate 2016-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 29.