http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017125093-A

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filingDate 2016-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_919854ea9f615a8b675e5e5b6ac4ab66
publicationDate 2017-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2017125093-A
titleOfInvention Semiconductor protective tape and wafer processing method
abstract A semiconductor protective tape and a wafer processing method capable of maintaining sufficient wafer protection performance even when high-temperature processing is performed on a wafer having irregularities on the surface, and capable of being peeled off from the wafer without any adhesive residue after processing. A photocurable pressure-sensitive adhesive layer 12 containing a photopolymerization initiator having a longest wavelength of 380 nm or more at which the absorbance of the photopolymerization initiator is 0.1 or more and a substrate layer 11 made of polyethylene naphthalate are provided. A wafer processing method using a semiconductor protective tape. The absorbance measurement conditions are an initiator concentration of 0.01% by weight (acetonitrile solution), a cell length of 10 mm (quartz cell), and a wavelength of 200 nm to 800 nm. A wafer processing method including an attaching step of attaching the semiconductor protective tape to a surface of the wafer having a concave and convex portion formed on the surface thereof in a state where the bottom portion of the concave portion is not in contact with the surface. [Selection] Figure 1
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