Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1374dd16777534b65ad4422333245af8 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
filingDate |
2015-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69084c3b1ce90e669eb7f887faa1fc4b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be0be52eb1816c3bb7f475d9203f8510 |
publicationDate |
2017-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2017120349-A |
titleOfInvention |
Photosensitive resin composition and semiconductor device manufacturing method |
abstract |
A photosensitive resin composition that has high temperature heat resistance and conductivity, does not cause metal impurities to a semiconductor substrate, can be patterned, and can be applied to a high temperature ion implantation process at low cost. And a method of manufacturing a semiconductor device using such a composition. The photosensitive resin composition of the present invention contains a photosensitive resin and particles of a conductive material and / or a semiconductor material. Moreover, the method of this invention which manufactures a semiconductor device is the process of forming the pattern (11) of the film | membrane of the photosensitive resin composition of this invention on a semiconductor layer or a base material (2), the photosensitive resin composition of A step of baking the film pattern to form an ion implantation mask (13), a step of implanting ions into the semiconductor layer or the substrate (2) through the pattern opening (12) of the ion implantation mask, and an ion Removing the implantation mask (13). [Selection] Figure 1 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020088270-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7056532-B2 |
priorityDate |
2015-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |