http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017120349-A

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filingDate 2015-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69084c3b1ce90e669eb7f887faa1fc4b
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publicationDate 2017-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2017120349-A
titleOfInvention Photosensitive resin composition and semiconductor device manufacturing method
abstract A photosensitive resin composition that has high temperature heat resistance and conductivity, does not cause metal impurities to a semiconductor substrate, can be patterned, and can be applied to a high temperature ion implantation process at low cost. And a method of manufacturing a semiconductor device using such a composition. The photosensitive resin composition of the present invention contains a photosensitive resin and particles of a conductive material and / or a semiconductor material. Moreover, the method of this invention which manufactures a semiconductor device is the process of forming the pattern (11) of the film | membrane of the photosensitive resin composition of this invention on a semiconductor layer or a base material (2), the photosensitive resin composition of A step of baking the film pattern to form an ion implantation mask (13), a step of implanting ions into the semiconductor layer or the substrate (2) through the pattern opening (12) of the ion implantation mask, and an ion Removing the implantation mask (13). [Selection] Figure 1
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