| abstract |
Disclosed is a fine and locally spatially resolved plasma density control near a substrate surface. A method of correcting a reaction speed on a semiconductor substrate in a processing chamber using a microwave antenna of a phased array, the step of exciting plasma in the processing chamber, and a phased array 101 of a microwave antenna Emitting a microwave radiation beam 110 from and directing the beam to the plasma so as to change a reaction rate on the surface 120 of the semiconductor substrate in the processing chamber. [Selection] Figure 1A |