| abstract |
To reduce contamination in an ICP plasma etching apparatus. When a device uses a chamber, a platen that is a substrate support located inside the chamber, and a plasma generator used for etching a substrate (wafer), the periphery of the substrate is used. A protective structure in the form of a back sputter 28 that surrounds the substrate support so that the portion is protected from unwanted particulate material contamination so that the metallic material is sputtered from the protective structure onto the inner surface of the chamber. The protective structure is arranged so as to be electrically biased and formed of a metallic material so that the particulate material can be adsorbed on the inner surface. [Selection] Figure 1 |