| abstract |
III-V materials such as gallium nitride (GaN) suitable for a wide range of applications such as etching processes for grooves and holes, HEMT manufacturing, LED manufacturing, and improved selectivity in the etching process An ALE method and apparatus for removal are provided. In order to form a modified III-V surface layer, the III-V material is exposed to a chlorine-containing plasma without biasing the substrate, and the modified III-V surface layer is plasma treated. Applying a bias voltage to the substrate while exposing the substrate, thereby removing the modified III-V surface layer. [Selection] Figure 1A |