http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016541119-A

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
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filingDate 2014-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2016541119-A
titleOfInvention DC overlay freeze
abstract Systems and methods including improved techniques for patterning a substrate, including improvements to double patterning techniques. DC superposition plasma processing is combined with photolithography patterning techniques. The electron flux or ballistic electron beam from the plasma processing system can induce cross-linking in a given photoresist, which makes the photoresist resistant to subsequent light exposure and / or developer processing. To change. A plasma processing system can also be used to add a protective layer of oxide on the exposed surface of the first relief pattern, thereby protecting the photoresist from developing acid. By protecting the first photoregistry leaf pattern from developing acid, a second pattern can be applied on and / or between the first photoregistry leaf patterns; Can double the initial pattern or otherwise increase the pattern density. This combined pattern can then be used for subsequent microfabrication, for example, transferring the combined pattern to one or more lower layers.
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Total number of triples: 34.