abstract |
A pattern processing composition and a processing method for increasing the resolution of a resist pattern are provided. (A) providing a semiconductor substrate with a patterning feature on a surface; (b) a pattern processing composition comprising a block copolymer and a solvent, wherein the block copolymer comprises a first block and a second block; Wherein the first block comprises units formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, the hydrogen acceptor group is a nitrogen-containing group, and the second block comprises Applying a treatment composition comprising units formed from a second monomer containing an ethylenically unsaturated polymerizable group and an aromatic group; (c) rinsing the residual pattern treatment composition from the substrate; Leaving a portion of the block copolymer bonded to the resist pattern. [Selection] Figure 1A |