| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 |
| filingDate |
2015-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e417a9a9b18d82b26e51b597a4020259
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5755f1dcc9238a713a32b6c93d482b0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44d97d732d58964b7886f6e250335ea5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bcdb7bb8da3fa904cfc4ad4f0da0664 |
| publicationDate |
2016-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2016206449-A |
| titleOfInvention |
Pattern formation method |
| abstract |
Provided is a pattern forming method capable of improving the transfer property of a dual damascene pattern to a film to be processed when a dual damascene pattern is formed by two lithography processes and one dry etching process. (1) A step of forming a first resist film derived from a first radiation-sensitive composition on a film to be processed. (2) A step of exposing and developing the first resist film to form the first resist pattern 24. (3) A step of performing insolubilization treatment for insolubilizing the first resist pattern 24 with respect to the solvent of the second radiation-sensitive composition. (4) A step of forming a second resist film derived from the second radiation-sensitive composition on the first resist pattern 241. (5) A step of forming the second resist pattern 25 by exposing and developing the second resist film. Here, the pattern formation method whose at least any one of a 1st radiation sensitive composition and a 2nd radiation sensitive composition is a high molecular compound which has tolerance with respect to oxygen. [Selection] Figure 1-1 |
| priorityDate |
2015-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |