| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02277
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32522 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2015-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42f3ea1c9b4f85befb1761f8a88d5626
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_268f3b171c47b51e62dfe744851539e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c68d462992f4f298092872f5a72eaef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a740795c8f77769fb4ae5883959a9d3 |
| publicationDate |
2016-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2016184629-A |
| titleOfInvention |
Semiconductor device manufacturing method, substrate processing apparatus, and program |
| abstract |
[PROBLEMS] To improve the productivity of a film formation process and stabilize a film formation rate. A source and a reactant are supplied to a substrate in a processing chamber at a first temperature at which these substances are not thermally decomposed, and a film is formed on the substrate and a film is formed. Supplying at least one substance selected from the group consisting of a plasma excitation gas, alcohol and a reducing agent to the processing chamber after the operation is performed at a second temperature equal to or lower than the first temperature, and purging the processing chamber; Have. [Selection] Figure 1 |
| priorityDate |
2015-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |