| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02087
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2015-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_736993b228fbfdc89b52a79353118497 |
| publicationDate |
2016-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2016157779-A |
| titleOfInvention |
Manufacturing method of semiconductor device |
| abstract |
The manufacturing yield of a semiconductor device is improved. In a method of manufacturing a semiconductor device using a multilayer resist, before the wafer is subjected to water repellency treatment for immersion exposure, the antireflection film, the lower layer film and the intermediate layer film applied to the wafer edge are rinsed. Remove with. [Selection] Figure 4 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019158966-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7040146-B2 |
| priorityDate |
2015-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |