http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016105465-A

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filingDate 2015-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_248cbdd2a1034f7dee5806fede6b9e88
publicationDate 2016-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2016105465-A
titleOfInvention Plating metal hard mask for vertical NAND hole etching
abstract A method for forming recess features (structures) on a substrate with a high aspect ratio is provided. Formed in the context of fabricating a vertical NAND (VNAND) memory device. Depositing a sacrificial post 302c on the metal seed layer 310 covering the underlying material stack 301 and shaping it; electroplating or electrolessly plating a metal hard mask material 320 around the sacrificial post 302c; It involves removing the sacrificial post 302c and etching the underlying material stack 301 to form a high aspect ratio recess feature. [Selection] Figure 3D
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