| abstract |
The present invention provides a sintered body that exhibits excellent resistance to halogen-based plasma and is useful as a constituent material for semiconductor manufacturing apparatuses such as etching apparatuses. The sintered body of the present invention contains yttrium oxyfluoride. The yttrium oxyfluoride is preferably YOF and / or Y 5 O 4 F 7 . The sintered body of the present invention preferably has a relative density of 70% or more and an open porosity of 10% or less. Further, the linear thermal expansion coefficient at 200 to 400 ° C. is 2.0 × 10 −6 / K or more and 8.0 × 10 −6 / K or less, and the three-point bending strength is 10 MPa or more and 300 MPa or less. It is also preferable that there is. [Selection figure] None |