| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2014-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5a583b63591e1fd7f54e87da4a8aedc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e09f937e3e0db8921d39c2aee21f255e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_988abd9b717df4b272ef6d3dae284e57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83d4ca072a20fd9dd5c679182919bb20 |
| publicationDate |
2016-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2016092102-A |
| titleOfInvention |
Method for etching an organic film |
| abstract |
An organic film is etched while suppressing damage to a base layer. [Solution] The method according to an embodiment includes a step of etching the organic film in a processing container of a plasma processing apparatus that accommodates an object to be processed. In this step, a processing gas containing hydrogen gas and nitrogen gas is supplied into the processing container to generate plasma of the processing gas. The ratio of the flow rate of hydrogen gas to the flow rate of the processing gas is set to a ratio of 35% or more and 75% or less. Further, the high frequency bias power for drawing ions into the object to be processed is set to a power in the range of 50 W or more and 135 W or less. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10672622-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019046853-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190024790-A |
| priorityDate |
2014-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |