| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73e224665ceb7b15f8e66dfd0ee245c6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-0206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32798 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-453
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2014-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af8142bb1905f32596261c2a14f973ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_008e05a33536838793e058823d1efa3b |
| publicationDate |
2016-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2016062803-A |
| titleOfInvention |
Plasma processing apparatus and method, and electronic device manufacturing method |
| abstract |
An object of the present invention is to provide a plasma processing apparatus and method that can perform high-speed processing and that can stably use plasma, and a method for manufacturing an electronic device. In an inductively coupled plasma torch unit, a coil, a first ceramic block and a second ceramic block are arranged in parallel, and a long chamber is annular. The plasma P generated in the chamber 7 is ejected from the opening in the chamber 7 toward the substrate 1. The base material 1 is processed by relatively moving the long chamber 7 and the base material 1 in a direction perpendicular to the longitudinal direction of the opening. A rotating cylindrical ceramic tube 13 is provided, and a high-frequency power can be applied by allowing a coolant to flow through a cavity inside the tube, thereby enabling high-speed plasma processing. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017212195-A |
| priorityDate |
2014-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |