http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016051777-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d93502a23a72b56472bc75854cfe7c60 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2014-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8487554e86dda2cb63907638d95467a |
| publicationDate | 2016-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2016051777-A |
| titleOfInvention | Plasma etching method of silicon oxide film |
| abstract | In a plasma etching method of a silicon oxide film using fluorocarbon or hydrofluorocarbon, a plasma etching method capable of stably obtaining a sufficient etching rate and etching selectivity is provided. A plasma etching method for a silicon oxide film, wherein a processing gas containing at least one selected from fluorocarbon and hydrofluorocarbon and carbonyl fluoride is used. [Selection figure] None |
| priorityDate | 2014-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.