| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0fa3ca2c9e92a92d9079a47a3d42b12e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02175
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2015-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8395ab001451ea1755e428e63cfebac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ec91c5fc4447a440cc9d0a898862385 |
| publicationDate |
2016-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2016047958-A |
| titleOfInvention |
Radical enhanced atomic layer deposition using CF4 to promote oxygen radical generation |
| abstract |
Provided is a method for executing RE-ALD processing with a high deposition rate. A method for performing a radical enhanced atomic layer deposition (RE-ALD) process on a surface of a substrate 142 existing inside a reaction chamber 20, comprising supplying a gas mixture 112 of CF 4 gas and O 2 gas; Forming a plasma from the gas mixture, generating oxygen radicals at a faster rate than when no CF4 gas is present in the gas mixture 112, and continuously introducing oxygen radicals and precursor gas 116 into the reaction chamber 20; And a step of forming a metal oxide film made of a metal organic precursor on the surface of the substrate 142, and the CF4 gas is present at a concentration in the range of 0.1% by volume to 10% by volume. [Selection] Figure 1 |
| priorityDate |
2014-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |