http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016042161-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fcc0b66123940d1b32783569ebfa2d45 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate | 2014-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3ad7671d74be56968b686a75140698f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47444ed2c5a58d0565bf04697bba0171 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a55a1ac76182d9688da99180d06355f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02e26278f431e84fd7dbd016498655d3 |
| publicationDate | 2016-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2016042161-A |
| titleOfInvention | Extreme ultraviolet or electron beam resist composition, pattern forming method, and resist pattern |
| abstract | A novel extreme ultraviolet or electron beam resist composition capable of improving nanoedge roughness and sufficiently satisfying sensitivity, a resist pattern forming method using the same, and a resist film are provided. An extreme ultraviolet or electron beam resist containing [A] a polymer having a structural unit containing an acid dissociable group, [B] an acid generator, [C] an acid diffusion controller, and [D] a solvent. The composition [D] has a transmittance of 95% or more in the wavelength region of 300 to 600 nm of the [D] solvent, and the concentration of components other than the [D] solvent in the extreme ultraviolet light or electron beam resist composition is An optical path length of 1 cm at a wavelength of 300 to 600 nm in a solution obtained by diluting the extreme ultraviolet ray or electron beam resist composition with a [D] solvent so as to be 0.01% by mass when the [D] solvent is used as a reference solvent. The composition for an extreme ultraviolet ray or electron beam resist is characterized in that the per unit absorbance is less than 0.01. [Selection figure] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11249398-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2018163602-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018163602-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023119910-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7147741-B2 |
| priorityDate | 2014-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 411.