http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016015384-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_669c01133740c5233f2c8738904ea3af |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-34 |
filingDate | 2014-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e032ea171a8cd7872b2291a2424d1c2d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6342ad0ccd741e45e78015ab576ba20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73a89c5c50f891d0fa0f91b4dbbce925 |
publicationDate | 2016-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2016015384-A |
titleOfInvention | Method for manufacturing electronic device using chip-on-substrate |
abstract | In manufacturing an electronic apparatus in which an electronic device is stacked on a COF substrate, the basic configuration of the COF substrate is maintained, and sufficient for external force in the bending direction with respect to the COF substrate without reducing the productivity. To provide an electronic device having strength. An electronic device manufacturing method for manufacturing an electronic device by mounting an electronic device on a chip-on substrate having a metal wiring portion formed on a surface of the substrate film. A substrate heat resistance improving step for performing an annealing process for improving the heat shrinkage start temperature, and an electrical connection between the metal wiring part 13 and the electronic device 2, and containing tin, silver, and copper And a high temperature soldering process performed with a high melting point solder having a melting point of 200 ° C. or higher. [Selection] Figure 2 |
priorityDate | 2014-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.