http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015527743-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-0127 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00158 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00619 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00531 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-0038 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate | 2013-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2015527743-A |
| titleOfInvention | Method for manufacturing a plurality of trench structures |
| abstract | A method of manufacturing a plurality of trench structures is provided and includes the following steps. An anisotropic etching is performed on the semiconductor substrate to form a vertical trench. A first epitaxial layer is grown on a semiconductor substrate in which a vertical trench is formed, and the first epitaxial layer covers an upper portion of the vertical trench to form a sealed structure. In the sealed structure, anisotropic etching and isotropic etching are performed to form a trench array, and the trench array and the vertical trench are communicated. The trench arrangement includes a plurality of trenches or through-holes, and upper portions of the plurality of trenches or through-holes are separated from each other to form a chamber in which the lower portions communicate with each other. A second epitaxial layer is grown to cover the trench array and form a plurality of sealed trench structures. By growing the epitaxial layer twice, the stability and robustness in the production of a plurality of trench structures can be maintained, and the film layer can be prevented from being broken or dropped during the production. [Selection] Figure 2 |
| priorityDate | 2012-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.