| abstract |
Provided is an etching method capable of etching a silicon nitride film with a high selectivity with respect to a silicon oxide film and / or silicon by a method in which plasma is not generated in a chamber. A substrate W having a silicon nitride film on the surface and having a silicon and / or silicon oxide film adjacent to the silicon nitride film is disposed in a chamber 40, and a fluorine-containing gas and a gas are contained in the chamber 40. Then, alcohol gas, O 2 gas, and inert gas are supplied in an excited state, whereby the silicon nitride film is selectively etched with respect to the silicon and / or silicon oxide film. [Selection] Figure 3 |