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filingDate 2014-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f43047eee705c62724961c693611ac3
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publicationDate 2015-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2015216197-A
titleOfInvention Wafer level optical semiconductor device manufacturing method, optical semiconductor device manufacturing method, and optical semiconductor device
abstract [PROBLEMS] To reduce the number of members, to prevent the prevention of sulfidation, to withstand the driving of a high-power optical semiconductor element, to have high dimensional accuracy of the product, to reduce unevenness and variation in emission color, and to improve the product characteristics after manufacture. Provided is a method for manufacturing a member for a wafer level optical semiconductor device, which makes it possible to easily manufacture an optical semiconductor device that can be easily managed at low cost. (I) a step of mounting a plurality of optical semiconductor elements on an adhesive sheet surface of a support substrate provided with an adhesive sheet; and (ii) an adhesive sheet surface on which the optical semiconductor elements of the support substrate are mounted and light transmittance. A method comprising supplying a thermosetting resin composition between the members, molding and curing the composition to obtain a laminate, and (iii) peeling the support substrate and the adhesive sheet from the laminate, In the step (i) or (ii), a method for producing a wafer level optical semiconductor device member comprising a light reflective thermosetting resin at a portion corresponding to a dicing line and a light reflective member having a hardness of Shore D of 20 or more. . [Selection] Figure 1
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