| abstract |
A semiconductor device in which warpage of a semiconductor device is suppressed even when the semiconductor device is easily mounted on a wiring board or stacked with a semiconductor device and the density of metal wiring is high is provided. A semiconductor device includes a semiconductor element, a metal pad on the semiconductor element and a metal wiring electrically connected to the semiconductor element, and the metal wiring is electrically connected to the through electrode and the solder bump. A first insulating layer on which the semiconductor element is placed; a second insulating layer formed on the semiconductor element; and a third insulating layer formed on the second insulating layer; The upper surface of the insulating layer is electrically connected to the semiconductor element through the metal pad on the semiconductor element, penetrates the second insulating layer from the upper surface of the second insulating layer, and is electrically connected to the through electrode on the lower surface of the second insulating layer. A semiconductor in which a semiconductor element lower metal wiring is disposed between the first insulating layer and the semiconductor element, and the semiconductor element lower metal wiring is electrically connected to the metal wiring on the lower surface of the second insulating layer. apparatus. [Selection] Figure 1 |