http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015161834-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_669c01133740c5233f2c8738904ea3af |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2014-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f71e5ae5bc8eeb88466d48ab2f9aeafa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c299aa14d730a58fadc891a4712ab35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d52cb64acbbdb1ec4e6c5a866cfa981 |
| publicationDate | 2015-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2015161834-A |
| titleOfInvention | Photomask manufacturing method |
| abstract | It is possible to correct a defect defect without manufacturing a correction material having the same optical characteristics, light resistance, and cleaning resistance as the material constituting the mask pattern, and to manufacture a photomask free from the defect defect. A photomask manufacturing method is provided. On a first thin film, a second thin film that is easier to repair defects than the first thin film is formed, and the second thin film is processed to form a second thin film pattern. At the stage of forming the defect, the defect inspection of the detected second thin film pattern 13 is corrected, and the first thin film 12A exposed from the defect corrected second thin film pattern 13 is etched. A first thin film pattern 12 is formed. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10217635-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111610693-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111610693-B |
| priorityDate | 2014-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 55.