http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015026059-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_669c01133740c5233f2c8738904ea3af
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-74
filingDate 2014-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f71e5ae5bc8eeb88466d48ab2f9aeafa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c299aa14d730a58fadc891a4712ab35
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publicationDate 2015-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2015026059-A
titleOfInvention Photomask manufacturing method
abstract 【Task】 The present invention can correct a residual defect even in a photomask having a pattern composed of a thin film having high light resistance in ArF excimer laser exposure, and can manufacture a photomask free of residual defects. An object of the present invention is to provide a photomask manufacturing method. [Solution] On the first thin film having light resistance, a second thin film having a defect correction easier than that of the first thin film is formed, and the second thin film is processed to form a second thin film pattern. Performing a defect inspection, correcting a residual defect portion of the detected second thin film pattern, and etching the first thin film exposed from the defect corrected second thin film pattern to form a first thin film pattern Thus, the above problem is solved. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11061316-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018100958-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015161834-A
priorityDate 2013-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 28.