| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7867c443e6b3f77e1d8e8b4eef4997df |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3444 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3467
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3444
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3485 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-24 |
| filingDate |
2015-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7bd98c1d54bb7a4376db91b0fc7c118c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cceba6fe81045462282790d503b6556c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41161052795bdc892c807bb642abaf90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b4d0a00139bdbc591cc0f20f098dfec |
| publicationDate |
2015-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2015148015-A |
| titleOfInvention |
High power pulsed magnetron sputtering method and high power electrical energy source |
| abstract |
In a magnetically accelerated high power sputtering method, the degree of ionization is increased, and at the same time, positive charges are removed from the surface of the target to prevent heating of the target and to increase the utilization of the target material. In a high power pulsed magnetron sputtering method that generates a sequence of composite discharge pulses and ionizes a sputtering gas within a process chamber, the composite discharge pulses are for a first pulse time (τ 1 ). An applied high power sputtering pulse (10) and a low power charge removal pulse (11) for removing charge on the target applied for a second pulse time (τ 2 ), said second pulse time ( tau 2 ratio of the first pulse time (tau 1) for) (τ 1 / τ 2) is 0.5 at the maximum. [Selection] Figure 5 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11152926-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020077607-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110858755-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110858755-A |
| priorityDate |
2008-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |