| abstract |
The reliability of a semiconductor device is improved. According to one embodiment, a method for manufacturing a semiconductor device includes a step of removing a patterned resist film, and the step of removing the patterned resist film includes (A) a gas containing at least oxygen. (B) starting a discharge for converting the oxygen-containing gas into plasma, and (C) introducing water vapor or alcohol vapor into the processing chamber. At this time, the step (C) is performed simultaneously with the step (B) or after the step (B). [Selection] Figure 14 |