http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015140472-A

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filingDate 2014-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2015-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2015140472-A
titleOfInvention Substrate processing apparatus and semiconductor device manufacturing method
abstract An object of the present invention is to suppress deposits in a space above a gas guide in a shower head. A processing chamber 201 for processing a substrate, a buffer chamber 232 provided above the processing chamber and having a dispersion plate for uniformly supplying gas to the processing chamber, and a ceiling plate configured as a ceiling structure of the buffer chamber 231 and a processing gas supply hole 231a to which the processing gas supply unit is connected upstream with respect to the gas supply direction, and a ceiling plate, and an inert gas supply unit upstream with respect to the gas supply direction. An inert gas supply hole 231b to be connected and a processing gas supply hole are located on the inner peripheral side, and a circumferential shape connected to the downstream surface of the ceiling plate so that the inert gas supply hole is located on the outer peripheral side A base end portion 235a, a gas guide 235 having a base end portion and disposed above the dispersion plate, a processing chamber exhaust section provided under the processing chamber for exhausting the atmosphere of the processing chamber, and at least a processing gas Supply unit, inert gas supply unit, processing A substrate processing apparatus and a control unit for controlling the exhaust. [Selection] Figure 1
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priorityDate 2014-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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