| abstract |
A method of forming a silicon oxide film on a substrate at a relatively low temperature by chemical vapor deposition of a silane oxide precursor is provided. A method for forming a silicon oxide film on a substrate by chemical vapor deposition of a silane oxide precursor by reaction with an oxidant comprising using an aminosilane precursor represented by the following formula: Method: RR 1 NSiH 3 (Formula A), RN (SiH 3 ) 2 (Formula B), SiH 3 RN (R 2 ) NR 1 SiH 3 (Formula C) where R and R 1 are linear, Selected from the group consisting of branched or cyclic saturated or unsaturated C 2 -C 10 alkyl groups, aromatics, alkylamino groups; in Formula A and Formula C, R and R 1 are cyclic groups (CH 2) it may be made to n (n is 1-6, preferably 4 and 5), and R 2 is a single bond, represents (CH 2) n chain, ring, a SiR 2, or SiH 2. [Selection figure] None |