| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32724
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3426
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67184
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-046 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2013-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1216cd9e0b6675edb9350f77f7921df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35461eb44b3375a5381d66b661334d04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31f2b9e344133a5e3c2f454865caa72e |
| publicationDate |
2015-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2015115531-A |
| titleOfInvention |
Manufacturing method of semiconductor device |
| abstract |
A method of manufacturing a semiconductor device is provided which can reduce the resistance of a Cu wiring by using a low dielectric constant film having high strength. A nitrogen plasma treatment is performed on a substrate having an interlayer insulating film made of a fluorine-added carbon film having recesses of a predetermined pattern formed on the surface, and then the fluorine-added carbon subjected to the nitrogen plasma treatment. Forming a Ru film directly on the film; and embedding a Cu film serving as a Cu wiring in the recess. [Selection] Figure 1 |
| priorityDate |
2013-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |