| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0259
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2015-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9587431209c7f56f7de2760369a3e149
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2dd7e8962533ce279af427298f32941 |
| publicationDate |
2015-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2015092615-A |
| titleOfInvention |
Semiconductor device |
| abstract |
An object is to provide a semiconductor device for high power using a new semiconductor material with high productivity. Another object is to provide a semiconductor device with a new structure using a new semiconductor material. A first conductive layer on a substrate, an oxide semiconductor layer covering the first conductive layer, a second conductive layer on the oxide semiconductor layer in a region not overlapping with the first conductive layer, An insulating layer covering the oxide semiconductor layer and the second conductive layer, and a third conductive layer in a region including at least a region not overlapping with the first conductive layer and the second conductive layer on the insulating layer. It is a semiconductor device having. [Selection] Figure 1 |
| priorityDate |
2009-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |