| abstract |
[PROBLEMS] Conventionally, for example, a MOSFET using SiO 2 as a gate insulating film has a limited amount of charge that can be induced in the gate insulating film due to its withstand voltage, and it has been difficult to control a large current with a low driving voltage. . A solid-state electronic device having a gate electrode 3 to which a control voltage is applied, and a source electrode 4 and a drain electrode 5 whose conduction state is controlled by the control voltage, the source electrode being between the source electrode and the drain electrode A channel layer 1 for generating a channel, and a gate insulating film 2 provided between the gate electrode and the channel layer and made of a dielectric material having a large equivalent relative dielectric constant. . [Selection] Figure 2 |