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filingDate 2013-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_371860a7466675b9ae0cb1c2a0c9236b
publicationDate 2015-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2015082507-A
titleOfInvention Semiconductor device and manufacturing method of semiconductor device
abstract An object of the present invention is to improve both the embedding property of a wiring groove and to suppress the occurrence of poor connection between a wiring and a connecting member. In a cross section that passes through a contact CON and is perpendicular to a direction in which a second wiring INC2 extends, the center of the contact CON is closer to a first side surface SID1 of the second wiring INC2 than the center of the second wiring INC2. close. When the region overlapping the contact CON in the direction in which the second wiring INC2 extends out of the first side surface SID1 of the second wiring INC2 is defined as the overlapping region OLP, at least the lower part of the overlapping region OLP is the second wiring INC2. The slope is steeper than the rest of the side. [Selection] Figure 1
priorityDate 2013-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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