http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015076550-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2013-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d13d03f9af5bbbb6b9628816c3ff45e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32a9b37c97c674b6b3d6d4150a8234d9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ebd9a9e9ad0138c942b72fbbff785df |
| publicationDate | 2015-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2015076550-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | Provided is a method for manufacturing a semiconductor device, which can easily remove a reaction product having a high boiling point deposited on an inner wall of an etching apparatus. An embodiment is a method for manufacturing a semiconductor device, in which a semiconductor substrate having an upper layer film on at least a difficult-to-etch material is etched using a plasma etching apparatus having a processing chamber. After the semiconductor substrate is carried into the processing chamber, the upper layer film is etched, and a lift-off layer is formed on the inner wall of the processing chamber while the semiconductor substrate is carried into the processing chamber. After etching the difficult-to-etch material and carrying the semiconductor substrate out of the plasma etching apparatus, a cleaning process is performed on the inner wall of the processing chamber. In the etching process of the difficult etching material, the reaction product of the difficult etching material is deposited on the inner wall of the processing chamber where the lift-off layer is formed. In the cleaning process, the reaction product layer is removed by removing the lift-off layer. [Selection] Figure 8 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019125686-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019125685-A |
| priorityDate | 2013-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 58.