| abstract |
A semiconductor device with improved reliability and integration is provided. A semiconductor device according to the present invention includes a substrate including an active region defined by an element isolation film, a gate electrode extending in a first direction across the active region, and the first electrode on the gate electrode. A plurality of wirings extending in a second direction orthogonal to one direction, and disposed between the gate electrode and the plurality of wirings, spaced apart from the gate electrode and the plurality of wirings, and extended in the first direction. A contact pad that overlaps the plurality of wirings and the active region, a lower contact plug that electrically connects the contact pad to the active region, and one of the contact pad and the plurality of wirings. An upper contact plug for electrical connection. [Selection] Figure 1 |