| abstract |
A method of manufacturing a light emitting device having a configuration and structure capable of making the length of a resonator uniform is provided. A light emitting element manufacturing method includes: (a) forming a mask layer 12 for selective growth on a region 14 outside an element forming region 13 on a light emitting element manufacturing substrate 11, and then (b) element forming. On the region 13, after forming a stacked structure 20 in which the first compound semiconductor layer 21, the active layer 23, and the second compound semiconductor layer 22 are stacked, (c) a second electrode is formed on the second compound semiconductor layer 22. 32 and the second light reflecting layer 42 are formed, and then (d) the second light reflecting layer 42 is fixed to the support substrate 26, and (e) the light emitting element manufacturing substrate 11 is removed, and the first compound semiconductor is removed. The first surface of the layer 21 and the mask layer 12 are exposed, and then (f) each step of forming the first light reflecting layer 41 and the first electrode 31 on the first surface of the first compound semiconductor layer 21 is provided. ing. [Selection] Figure 6 |