| abstract |
A method of manufacturing a light-emitting element, comprising at least the following steps: (A) forming a stack structure 20, the stack structure 20 comprising a GaN-based compound semiconductor, and stacking the following layers in the stack structure: a first compound semiconductor layer 21, an active layer 23 and the second compound semiconductor layer 22, and the concave mirror portion 43 is formed on the first surface side of the first compound semiconductor layer 21; then (B) the photosensitive material layer 35 is formed on the second compound semiconductor layer 22; and then (C) The photosensitive material layer 35 is exposed to light from the concave mirror portion side through the stacked structure 20 to obtain a handle mask layer including the photosensitive material layer 35, and then the second compound semiconductor layer 22 is treated using the handle mask layer. |