| abstract |
A crystalline oxide semiconductor film is provided. A first layer having a gallium atom, a zinc atom, and an oxygen atom and a second layer having an indium atom and an oxygen atom are collided with a target including a crystalline In—Ga—Zn oxide. The tabular In—Ga—Zn oxide in which the layer and the third layer containing a gallium atom, a zinc atom, and an oxygen atom are sequentially stacked is peeled off, and the tabular In—Ga—Zn oxide is crystallized. The film is irregularly deposited on the substrate while maintaining the property. [Selection] Figure 1 |