| abstract |
Resist composition for semiconductor manufacturing process having high sensitivity and resolving power, small line edge roughness (LER), excellent pattern shape and stability over time, and less outgassing in forming ultrafine patterns with a line width of 50 nm or less I will provide a. (A) A resist composition for a semiconductor manufacturing process containing a compound represented by the following general formula (I). In the general formula (I), R1 represents an alkyl group, a cycloalkyl group, or an aryl group, and R2 represents a monovalent organic group. R3 to R6 each represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or a halogen atom. However, R3 and R4, R4 and R5, or R5 and R6 may combine to form an alicyclic ring or aromatic ring. X represents an oxygen atom or a sulfur atom. [Selection figure] None |