http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015018841-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_86ff778280a8f314c5732fead5868411 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2013-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2194ecd5f41e8807dc91d24bfa7cb1a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b465933a5de963f0d08dd259df62f748 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4761d20f0d8b03d87f63bd3a066135ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03557ee5bbd62a6d3939f4bfa89a5f26 |
| publicationDate | 2015-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2015018841-A |
| titleOfInvention | Method for forming n-electrode on nitride semiconductor layer and method for manufacturing semiconductor laser device |
| abstract | A method for forming an n-electrode on a nitride semiconductor layer capable of suppressing deterioration with time of ohmic characteristics and a method for manufacturing a semiconductor laser device are provided. A step of performing directional plasma treatment on a nitrogen surface of a nitride semiconductor layer in an atmosphere containing oxygen, and forming an n-electrode on the nitrogen surface of the nitride semiconductor layer subjected to the plasma treatment. And forming a n-electrode on the nitride semiconductor layer. [Selection] Figure 1 |
| priorityDate | 2013-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.