http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007273492-A

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publicationDate 2007-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007273492-A
titleOfInvention Nitride semiconductor device and manufacturing method thereof
abstract A nitride semiconductor device capable of realizing low-resistance ohmic characteristics and high adhesion and a method for manufacturing the same are provided. A nitride semiconductor device includes an n-type GaN substrate on which a semiconductor element is formed, and an n electrode that is a metal electrode formed on the back surface of the GaN substrate. Between the GaN substrate 1 and the n-electrode 10, a surface modified layer 20 that functions as a carrier supply layer is provided. The surface modification layer 20 is formed by reacting and modifying the back surface of the GaN substrate 1 with a material containing silicon. [Selection] Figure 1
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