| abstract |
Conventional metallization processes do not work for high density or small feature size patterns. For example, a dry film can collapse or lift off during patterning, causing a short circuit or opening in the metallization pattern. An exemplary method for integrated circuit metallization includes forming features such as trenches, pads, and faces in a dielectric layer, and depositing a seed layer in the desired features in the dielectric layer; Selectively processing the seed layer. The treated region in the seed layer can be used as a seed for electroless deposition of a conductive material, such as copper, into the feature. If the seed layer is a catalyst ink, the seed layer can be processed by curing the catalyst ink with a laser. |