| abstract |
The present invention provides a plasma processing method for controlling the film thickness of deposits deposited on a mask in a plasma processing method for performing plasma etching using a deposition gas such as fluorocarbon gas and SiF4 gas. To do. The present invention relates to a plasma processing method in which a film to be etched is plasma-etched using a deposition gas, and the film thickness of the deposited film deposited on a mask is measured. A difference from a target value of the film thickness of the deposited film is obtained, and when the obtained difference is larger than an allowable value, the etching target film is controlled while controlling an etching parameter so that the obtained difference is within the allowable value. Etching is performed. [Selection] Figure 3 |