| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2012-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a37877a26010cbf750c97e8ee82767b9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c09a744e1a45be122a079f3f917facc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_528ec8ebff013be133f14c9a54f7ffc1 |
| publicationDate |
2014-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2014075493-A |
| titleOfInvention |
Film forming method and film forming apparatus |
| abstract |
An insulating film with high coverage is formed by a low temperature process. A film forming method includes: a processing container 12 that defines a processing space in which plasma is generated; a gas supply unit that supplies gas into the processing space 12; and a microwave that is supplied into the processing container to generate plasma. Is a film forming method for forming an insulating film 108 on a substrate to be processed by using a plasma generating unit GS that generates gas and a film forming apparatus provided with H 2 added to trisilylamine in a processing container 12 A film forming step of supplying the generated gas and generating plasma to form the insulating film 108 containing SiN on the substrate W to be processed. [Selection] Figure 3 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2019039127-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017175106-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10553410-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017050506-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019039127-A1 |
| priorityDate |
2012-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |