http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014060440-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02087 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2013-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d07f2bdd9f01297083779336e2c14e49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbf7ce1ab3fc9e4e1ae3ea8e0f2e9c59 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9741caeda704bc6eb1562bc9af0556a4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d35fdf1a115168cb227f20b65c0e0d51 |
| publicationDate | 2014-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2014060440-A |
| titleOfInvention | Gas conditioning for edge exclusion control in bevel edge etching plasma chambers |
| abstract | An apparatus and method for improving process yield by removing an unnecessary film near a bevel edge (chamfered edge) of a substrate. The apparatus and method include a central gas supply unit 275C and an end gas supply unit 275E, thereby selecting an optimum bevel edge etching process for narrowing an edge exclusion region in the direction of the substrate edge. It becomes possible. Furthermore, the apparatus and method according to the embodiment uses an adjustment gas to change the etching profile at the end of the bevel, and the process gas and the adjustment gas are brought into the chamber by the combination of the central gas supply unit and the end gas supply unit. Is introduced. Both the use of the adjustment gas and the arrangement of the gas supply section affect the etching characteristics at the end of the bevel. Further, the total gas flow rate, the distance between the gas supply plate and the substrate surface, the pressure, and the type of process gas also affect the etching profile at the end of the bevel. [Selection] Figure 2F |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7208160-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110914954-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110914954-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020520097-A |
| priorityDate | 2008-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.