| abstract |
A nonvolatile semiconductor memory device having excellent write / erase characteristics / charge retention characteristics and reliability is provided. A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulating film, a first charge storage film, a second insulating film, a second charge storage film, and a third insulation. It has a membrane 6 and a control electrode 7. In the nonvolatile semiconductor memory device 100, the first and second charge storage layers 3 and 5 are made of a metal material, a semi-metal material, or a semiconductor material, and the first insulating film 2, the second insulating film 4, and the first insulating film 4. One of the three insulating films 6 is composed of a laminated insulating film in which a plurality of insulating films are laminated, is in contact with one interface of the laminated insulating film, and is made of aluminum, boron, alkaline earth metal, transition containing any atom of metal 1e12atoms / cm 2 or more 1E16 atoms / cm 2 at a concentration, oxide film, nitride film, boride film having a film made of any of the sulfide film, carbide film. [Selection] Figure 2 |