http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014049143-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
filingDate 2012-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3ed34f5832447830fc1b198c27b46f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcc4a1f267e7892c321e588c7ff5731f
publicationDate 2014-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2014049143-A
titleOfInvention Nonvolatile semiconductor memory device
abstract The reliability of a read operation is improved. In the nonvolatile semiconductor memory device according to the present embodiment, in a read operation, when a first bit line and a first source line are electrically connected to a memory cell MTr to be read, the first source line is connected. At the same time as precharging to the first voltage, the first bit line is precharged to the first voltage. When the first bit line is precharged to the first voltage, the first and second transistors in the first current path and the third transistor in the second current path are turned on, so that the first bit line is turned on. And the potential of the first source line are equalized. The voltage applied to the gate of the first transistor is greater than the voltage applied to the gate of the second transistor. [Selection] FIG.
priorityDate 2012-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005339692-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013125569-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014011192-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID450646340
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Total number of triples: 23.