http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013125569-A

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Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-02
filingDate 2011-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcc4a1f267e7892c321e588c7ff5731f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3ed34f5832447830fc1b198c27b46f9
publicationDate 2013-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2013125569-A
titleOfInvention Nonvolatile semiconductor memory device
abstract The reliability of a read operation is improved. A nonvolatile semiconductor memory device includes a semiconductor substrate, a plurality of memory strings, and a control circuit that controls voltages applied to the plurality of memory strings. Each memory string is formed at the intersection of a plurality of word lines stacked on a semiconductor substrate, a semiconductor layer orthogonal to the plurality of word lines, and a plurality of word lines and the semiconductor layer, and current paths are connected in series. A plurality of memory cells connected to each other. In the read operation, the control circuit precharges the first source line connected to the memory cell to be read to the first voltage Vsrc and simultaneously sets the second source line connected to the non-read target to a second voltage higher than the first voltage. The first bit line connected to the memory cell to be read is precharged to the second voltage after the second source line is precharged to the voltage Vbl. [Selection] Figure 10
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013004123-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016062620-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015056192-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-6039805-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9666295-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014049143-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110021309-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110021309-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015004708-A1
priorityDate 2011-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011065723-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID176015
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID450646340

Total number of triples: 25.